Direct measurement of the extinction coefficient by differential transmittance.

A new procedure to measure the extinction coefficient k of film materials that are relatively transparent is presented. This procedure does not require the use of an optical-constant model or the knowledge of extra physical properties of the material, such as the specific heat capacity. It involves preparing a sample with two areas, at least one of them coated with the film, whereas the other may remain uncoated or may be coated with a different thickness of the same material. The differential transmittance between the two sample areas is shown to be proportional to k of the film material in the following measurement conditions: the incident light is p polarized and it impinges at the film material Brewster angle. The differential transmittance is obtained with a single measurement by making the light beam or the sample to oscillate with respect to one another and by using a lock-in amplifier; for normalization purposes, the transmittance in one of the sample areas is also measured. The proportionality factor between the normalized differential transmittance and k only involves the wavelength, the film thickness, and the Brewster angle. The knowledge of the film Brewster angle requires that the film refractive index (n) is measured beforehand; this can be performed with standard procedures, such as ellipsometry, since such techniques are efficient at measuring n of a transparent material, but are inefficient at measuring a small k. The procedure is exemplified with the calculation of k in the far ultraviolet of AlF3 films deposited by evaporation. The dependence of the uncertainty of k obtained with this procedure is analyzed in terms of the uncertainty of the film n, of wavelength, and of the degree of polarization of the incident beam. The selection of a substrate with similar n to the film material is also discussed. The uncertainties involved with the present procedure were analyzed for a specific example and an uncertainty of 2 × 10-5 in k calculation is considered feasible.

Far UV narrowband mirrors tuned at H Lyman α.

Imaging at H Ly-α (121.6 nm), among other spectral lines in the short far UV (FUV), is of high interest for astrophysics, solar, and atmosphere physics, since this spectral line is ubiquitously present in space observations. However, the lack of efficient narrowband coatings has mostly prevented such observations. Present and future space observatories like GLIDE and the IR/O/UV NASA concept, among other applications, can benefit from the development of efficient narrowband coatings at Ly-α. The current state of the art of narrowband FUV coatings lacks performance and stability for coatings that peak at wavelengths shorter than ∼135 nm. We report highly reflective AlF3/LaF3 narrowband mirrors at Ly-α prepared by thermal evaporation, with, to our knowledge, the highest reflectance (over 80%) of a narrowband multilayer at such a short wavelength obtained so far. We also report a remarkable reflectance after several months of storage in different environments, including relative humidity levels above 50%. For astrophysics targets in which Ly-α may mask a close spectral line, such as in the search for biomarkers, we present the first coating in the short FUV for imaging at the OI doublet (130.4 and 135.6 nm), with the additional requirement of rejecting the intense Ly-α, which might mask the OI observations. Additionally, we present coatings with the symmetric design, aimed to observe at Ly-α, and reject the strong OI geocoronal emission, that could be of interest for atmosphere observations.

Far UV-enhanced Al mirrors with a Ti seed film.

A Ti seed film is investigated towards improving the far UV reflectance of Al/MgF2 mirrors. Samples were initially coated with a Ti film in half of the area and they were later coated in the full area with an Al film and protected with MgF2. All materials were deposited by evaporation. Samples were prepared with the MgF2 layer deposited either at room temperature (RT) or at 225°C. A 3-nm thick Ti seed film was seen to significantly increase the reflectance of Al/MgF2 mirrors at the well-known reflectance dip centered at ∼160 nm; this was attributed to a reduction of short-range surface roughness at the Al/MgF2 interface, which is responsible for radiation absorption through surface-plasmon (SP) coupling. SP absorption was more efficiently reduced with a Ti seed film on samples fully deposited at RT. A Ti seed film as thin as 1 nm provided the largest SP absorption reduction, and the SP dip was almost completely removed.